Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application-Reference-Cited by-同舟云学术

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Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application

Published:2018-09-27 Issue:40 Volume:10 Page:33768-33772
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Tae Ho¹,Kang Dae Yun¹,Kim Tae Geun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea

Funder

National Research Foundation of Korea

Samsung Semiconductor Research Center, Korea University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b12385

Reference29 articles.

1. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

2. Memristive devices for computing

3. Nanoionics-based resistive switching memories

4. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

5. Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance

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4. Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes;ACS Applied Materials & Interfaces;2023-01-23

5. Controlling Threshold and Resistive Switch Functionalities in Ag‐Incorporated Organometallic Halide Perovskites for Memristive Crossbar Array;Advanced Functional Materials;2022-12-11

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