Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
2. School of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Republic of Korea
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Ministry of Science, ICT and Future Planning
Korea Display Research Corporation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b08568
Reference33 articles.
1. Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
2. Photoresponse of an oxide semiconductor photosensor
3. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared
4. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
5. Stable, Fast UV–Vis–NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on α-In2Te3 Films with a Direct Bandgap
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