Stable, Fast UV–Vis–NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on α-In2Te3 Films with a Direct Bandgap-Reference-Cited by-同舟云学术

Stable, Fast UV–Vis–NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on α-In2Te3 Films with a Direct Bandgap

Published:2016-08-04 Issue:32 Volume:8 Page:20872-20879
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yao Jiandong¹,Deng Zexiang¹,Zheng Zhaoqiang¹,Yang Guowei¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, School of Physics, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China

Funder

National Natural Science Foundation of China

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b06222

Reference44 articles.

1. 3D Computational Imaging with Single-Pixel Detectors

2. Graphene photodetectors for high-speed optical communications

3. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

4. Highly Conductive CdS Inverse Opals for Photochemical Solar Cells

5. Polarization dependent photocurrent in the Bi2Te3 topological insulator film for multifunctional photodetection

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