Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures-Reference-Cited by-同舟云学术

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures

Published:2018-06-11 Issue:24 Volume:10 Page:20661-20671
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Krausmann Jan¹^ORCID,Sanctis Shawn¹^ORCID,Engstler Jörg¹,Luysberg Martina²,Bruns Michael³,Schneider Jörg J.¹^ORCID

Affiliation:

1. Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany

2. Forschungszentrum Jülich GmbH, Ernst Ruska-Centre (ERC) and Peter Grünberg Institute (PGI), Wilhelm-Johnen-Straße, 52428 Jülich, Germany

3. Institute for Applied Materials (IAM-ESS), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, B 321, D-76344 Eggenstein-Leopoldshafen, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b03322

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