High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative-Reference-Cited by-同舟云学术

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High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Published:2018-03-13 Issue:12 Volume:10 Page:10202-10210
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Huang Wentao¹,Lin Yen-Hung¹,Anthopoulos Thomas D.¹²^ORCID

Affiliation:

1. Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, U.K.

2. Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b00121

Reference70 articles.

1. Low-cost all-polymer integrated circuits

2. Flexible active-matrix displays and shift registers based on solution-processed organic transistors

3. High-Performance Plastic Transistors Fabricated by Printing Techniques

4. The path to ubiquitous and low-cost organic electronic appliances on plastic

5. Organic photoresponse materials and devices

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3. Controlling electron transfer in a lateral near-infrared polymer photodetector by adding higher-LUMO-level acceptors: a pathway to reduce dark current;Journal of Materials Chemistry C;2024

4. Composition‐Dependent High‐Performance Phototransistors Based on Solution Processed CH₃NH₃PbI₃/ZnO Heterostructures;Advanced Optical Materials;2023-05-17

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