Conjugated Polymer Heteroatom Engineering Enables High Detectivity Symmetric Ambipolar Phototransistors

Author:

Nodari Davide1ORCID,Sharma Sandeep2,Jia Weitao1,Marsh Adam V.2,Lin Yen‐Hung34,Fu Yuang5,Lu Xinhui5,Russkikh Artem2ORCID,Harrison George T.2,Fatayer Shadi2,Gasparini Nicola1ORCID,Heeney Martin12ORCID,Panidi Julianna1ORCID

Affiliation:

1. Department of Chemistry & Centre for Processable Electronics Imperial College London London W12 0BZ UK

2. KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

3. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong SAR 999077 Hong Kong

4. State Key Laboratory of Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Hong Kong SAR 999077 Hong Kong

5. Department of Physics The Chinese University of Hong Kong Shatin Hong Kong SAR 999077 Hong Kong

Abstract

AbstractSolution‐processed high‐performing ambipolar organic phototransistors (OPTs) can enable low‐cost integrated circuits. Here, a heteroatom engineering approach to modify the electron affinity of a low band gap diketopyrrolopyrole (DPP) co‐polymer, resulting in well‐balanced charge transport, a more preferential edge‐on orientation and higher crystallinity, is demonstrated. Changing the comonomer heteroatom from sulfur (benzothiadiazole (BT)) to oxygen (benzooxadiazole (BO)) leads to an increased electron affinity and introduces higher ambipolarity. Organic thin film transistors fabricated from the novel PDPP‐BO exhibit charge carrier mobility of 0.6 and 0.3 cm2 Vs⁻1 for electrons and holes, respectively. Due to the high sensitivity of the PDPP‐based material and the balanced transport in PDPP‐BO, its application as an NIR detector in an OPT architecture is presented. By maintaining a high on/off ratio (9 × 104), ambipolar OPTs are shown with photoresponsivity of 69 and 99 A W⁻1 and specific detectivity of 8 × 107 for the p‐type operation and 4 × 109 Jones for the n‐type regime. The high symmetric NIR‐ambipolar OPTs are also evaluated as ambipolar photo‐inverters, and show a 46% gain enhancement under illumination.

Funder

King Abdullah University of Science and Technology

Engineering and Physical Sciences Research Council

Publisher

Wiley

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