Controlling electron transfer in a lateral near-infrared polymer photodetector by adding higher-LUMO-level acceptors: a pathway to reduce dark current-Reference-Cited by-同舟云学术

Controlling electron transfer in a lateral near-infrared polymer photodetector by adding higher-LUMO-level acceptors: a pathway to reduce dark current

Published:2024 Issue:14 Volume:12 Page:5203-5212
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Tao¹²^ORCID,Li Xiaoting¹,Zhang Junjie¹,Tang Wenjun¹,Jiang Sirong¹,Pan Changle¹,Qian Yue¹,Ding Shufang¹,Chen Yaqi¹,Jiang Chunzhi¹

Affiliation:

1. Microelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou 423000, P. R. China

2. Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, Xiangnan University, Chenzhou 423000, P. R. China

Abstract

A large potential barrier is formed by introducing higher-LUMO-level acceptors into the bulk heterojunction, which ensures that the electrons recombine with holes instead of exhibiting transmission, decreasing the dark current ~3 orders of magnitude.

Funder

National Natural Science Foundation of China

Science and Technology Program of Hunan Province

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04263D

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