Effective Atmospheric-Pressure Plasma Treatment toward High-Performance Solution-Processed Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Effective Atmospheric-Pressure Plasma Treatment toward High-Performance Solution-Processed Oxide Thin-Film Transistors

Published:2018-08-17 Issue:36 Volume:10 Page:30581-30586
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Jintaek¹²,Huh Jae-Eun¹,Lee Sung-Eun¹²,Lee Junhee¹,Lee Won Hyung¹,Lim Keon-Hee¹³,Kim Youn Sang¹⁴^ORCID

Affiliation:

1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

2. Samsung Display Company, Ltd, 181 Samsung-ro, Tangjeong-myeon, Asan-si, Chungcheongnam-Do 31454, Republic of Korea

3. Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States

4. Advanced Institute of Convergence Technology, 145 Gwanggyo-ro, Yeongtong-gu, Suwon 16229, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b11111

Reference28 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

3. Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

4. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

5. Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

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