Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films-Reference-Cited by-同舟云学术

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films

Published:2018-03-29 Issue:16 Volume:10 Page:14132-14144
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mihailescu Cristian N.¹²^ORCID,Symeou Elli¹,Svoukis Efthymios¹,Negrea Raluca F.³,Ghica Corneliu³,Teodorescu Valentin³,Tanase Liviu C.³,Negrila Catalin³,Giapintzakis John¹

Affiliation:

1. Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Avenue, PO Box 20537, 1678 Nicosia, Cyprus

2. National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Magurele, Romania

3. National Institute of Materials Physics, RO-077125 Magurele, Romania

Funder

Research Promotion Foundation

European Regional Development Fund

Agen?ia Spa?iala Rom?na

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b01436

Reference65 articles.

1. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

2. An Emergent Change of Phase for Electronics

3. Monolithically Integrated Circuits from Functional Oxides

4. Wafer-scale growth of VO2 thin films using a combinatorial approach

5. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

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