Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH3NH3PbI3 Electrolyte Layer Enabling Enhanced Multilevel Memory-Reference-Cited by-同舟云学术

Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH3NH3PbI3 Electrolyte Layer Enabling Enhanced Multilevel Memory

Published:2018-12-28 Issue:1 Volume:2 Page:307-314
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Wang Wei¹,Xu Jiaqi¹,Ma Hanlu²,Zhao Xiaoning¹^ORCID,Lin Ya¹,Zhang Cen¹,Wang Zhongqiang¹,Xu Haiyang¹,Liu Yichun¹

Affiliation:

1. Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China

2. School of Civil Engineering, Qingdao Huanghai University, 3111 Linghai Road, Qingdao 266427, China

Funder

State Administration of Foreign Experts Affairs

Ministry of Education of the People's Republic of China

China Postdoctoral Science Foundation

People's Government of Jilin Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b01928

Reference35 articles.

1. Reduced Interface-Mediated Recombination for High Open-Circuit Voltages in CH3NH3PbI3Solar Cells

2. Bright light-emitting diodes based on organometal halide perovskite

3. Lead iodide perovskite light-emitting field-effect transistor

4. Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices

5. Light-Induced Anomalous Resistive Switches Based on Individual Organic-Inorganic Halide Perovskite Micro-/Nanofibers

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