Re-examination of the Aqueous Stability of Atomic Layer Deposited (ALD) Amorphous Alumina (Al2O3) Thin Films and the Use of a Postdeposition Air Plasma Anneal to Enhance Stability-Reference-Cited by-同舟云学术

Re-examination of the Aqueous Stability of Atomic Layer Deposited (ALD) Amorphous Alumina (Al2O3) Thin Films and the Use of a Postdeposition Air Plasma Anneal to Enhance Stability

Published:2021-12-01 Issue:49 Volume:37 Page:14509-14519
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Willis Simon A.¹^ORCID,McGuinness Emily K.¹^ORCID,Li Yi¹,Losego Mark D.¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funder

Division of Chemistry

Division of Electrical, Communications and Cyber Systems

Gulf Research Program

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.1c02574

Reference41 articles.

1. Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition

2. Gas Diffusion Barriers on Polymers Using Multilayers Fabricated by Al2O3 and Rapid SiO2 Atomic Layer Deposition

3. Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

4. Breakdown and Protection of ALD Moisture Barrier Thin Films

5. Development of ALD Coatings for Harsh Environment Applications

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