Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100)-Reference-Cited by-同舟云学术

Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100)

Published:2021-06-01 Issue:23 Volume:37 Page:7194-7202
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Silva-Quinones Dhamelyz¹,Butera Robert E.²^ORCID,Wang George T.³^ORCID,Teplyakov Andrew V.¹^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States

2. Laboratory for Physical Sciences, College Park, Maryland 20740, United States

3. Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Funder

Division of Chemistry

National Nuclear Security Administration

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.1c00763

Reference57 articles.

1. Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

2. Covalent Surface Modification of Oxide Surfaces

3. Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects

4. Challenges and opportunities in chemical functionalization of semiconductor surfaces

5. Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

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