Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure
Author:
Affiliation:
1. ASM Belgium, Kapeldreef 75, 3000 Leuven, Belgium
2. ASM Japan K.K., 23-1, 6-chome Nagayama, Tama, Tokyo 206-0025, Japan
3. Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.1c02036
Reference31 articles.
1. Plasma atomic layer etching using conventional plasma equipment
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5. A New Concept for Spatially-Divided Reactive Ion Etching with ALD-Based Passivation
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