Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

Author:

Song Seul Ji1,Park Taehyung1,Yoon Kyung Jean1,Yoon Jung Ho1,Kwon Dae Eun1,Noh Wontae2,Lansalot-Matras Clement2,Gatineau Satoko2,Lee Han-Koo3,Gautam Sanjeev4ORCID,Cho Deok-Yong5ORCID,Lee Sang Woon6ORCID,Hwang Cheol Seong1ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea

2. Air Liquide Laboratories Korea, Suite 176, Yonsei Engineering Research Park, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea

3. Pohang Accelerator Laboratory, Pohang 37673, Korea

4. Dr. S.S.Bhatnagar University Institute of Chemical Engineering and Technology, Panjab University, Chandigarh 160 014, India

5. Department of Physics, Chonbuk National University, Jeonju 54896, Korea

6. Department of Physics and Division of Energy Systems Research, Ajou University, Suwon 16499, Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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