Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O-Reference-Cited by-同舟云学术

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

Published:2016-12-20 Issue:1 Volume:9 Page:537-547
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Song Seul Ji¹,Park Taehyung¹,Yoon Kyung Jean¹,Yoon Jung Ho¹,Kwon Dae Eun¹,Noh Wontae²,Lansalot-Matras Clement²,Gatineau Satoko²,Lee Han-Koo³,Gautam Sanjeev⁴^ORCID,Cho Deok-Yong⁵^ORCID,Lee Sang Woon⁶^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea

2. Air Liquide Laboratories Korea, Suite 176, Yonsei Engineering Research Park, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea

3. Pohang Accelerator Laboratory, Pohang 37673, Korea

4. Dr. S.S.Bhatnagar University Institute of Chemical Engineering and Technology, Panjab University, Chandigarh 160 014, India

5. Department of Physics, Chonbuk National University, Jeonju 54896, Korea

6. Department of Physics and Division of Energy Systems Research, Ajou University, Suwon 16499, Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science