Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods-Reference-Cited by-同舟云学术

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods

Published:2016-11-09 Issue:46 Volume:8 Page:31887-31893
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Weijian¹,Wen Xiaoming¹²,Latzel Michael³⁴,Heilmann Martin³,Yang Jianfeng¹,Dai Xi¹,Huang Shujuan¹,Shrestha Santosh¹,Patterson Robert¹,Christiansen Silke³⁵⁶,Conibeer Gavin¹

Affiliation:

1. Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney 2052, Australia

2. Centre for Micro-Photonics, Swinburne University of Technology, Melbourne 3122, Australia

3. Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1/Bau 24, 91058 Erlangen, Germany

4. Institute of Optics, Information and Photonics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 7/B2, 91058 Erlangen, Germany

5. Institute of Nanoarchitectures for Energy Conversion, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

6. Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany

Funder

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

China Scholarship Council

Australian Renewable Energy Agency

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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