Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires-Reference-Cited by-同舟云学术

Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires

Published:2015-09-28 Issue:39 Volume:7 Page:21898-21906
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Messanvi A.¹²³,Zhang H.¹,Neplokh V.¹,Julien F. H.¹,Bayle F.¹,Foldyna M.⁴,Bougerol C.²⁵,Gautier E.²⁶,Babichev A.⁷,Durand C.²³,Eymery J.²³,Tchernycheva M.¹

Affiliation:

1. Institut d’Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France

2. Université Grenoble Alpes, 38000 Grenoble, France

3. CEA, INAC-SP2M, “Nanophysique et semiconducteurs” group, 38000 Grenoble, France

4. LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France

5. CNRS, Inst. NEEL, 38042 Grenoble, France

6. CEA, INAC-SPINTEC, 38000 Grenoble, France

7. ITMO University, 197101 St. Petersburg, Russia

Funder

Agence Nationale de la Recherche

Directorate-General for Research and Innovation

Russian Foundation for Basic Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06473

Reference49 articles.

1. Small band gap bowing in In1−xGaxN alloys

2. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

4. Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes

5. InGaN/GaN multiple quantum well concentrator solar cells

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