Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates-Reference-Cited by-同舟云学术

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

Published:2016-11-30 Issue:49 Volume:8 Page:33786-33793
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lukosius M.¹,Dabrowski J.¹,Kitzmann J.¹,Fursenko O.¹,Akhtar F.¹,Lisker M.¹,Lippert G.¹,Schulze S.¹,Yamamoto Y.¹,Schubert M. A.¹,Krause H. M.¹,Wolff A.¹,Mai A.¹,Schroeder T.¹²,Lupina G.¹

Affiliation:

1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. BTU Cottbus-Senftenberg, Konrad Zuse Str. 1, 03046 Cottbus, Germany

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b11397

Reference21 articles.

1. Direct Growth of Graphene Film on Germanium Substrate

2. Graphene growth on Ge(100)/Si(100) substrates by CVD method

3. REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization

4. Solubility of Carbon in Silicon and Germanium

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing post-growth hydrogen intercalation and H2 nanobubbles formation in graphene on Ge(110);Materials Science in Semiconductor Processing;2024-04

2. Direct Metal-Free Growth and Dry Separation of Bilayer Graphene on Sapphire: Implications for Electronic Applications;ACS Applied Nano Materials;2023-10-12

3. Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001);ACS Applied Materials & Interfaces;2023-07-21

4. Determining Graphene and Substrate Quality from the Coupled Hall Mobility Measurements and Theoretical Modeling;2023 46th MIPRO ICT and Electronics Convention (MIPRO);2023-05-22

5. Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium;APL Materials;2023-04-01