Self-Assembly of the Lateral In2Se3/CuInSe2 Heterojunction for Enhanced Photodetection
Author:
Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, P. R. China
Funder
National Natural Science Foundation of China
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b16323
Reference42 articles.
1. High Responsivity Phototransistors Based on Few-Layer ReS2for Weak Signal Detection
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3. Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors
4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
5. Intrinsic and extrinsic performance limits of graphene devices on SiO2
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