Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors
Author:
Affiliation:
1. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
2. Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain
Funder
Stichting voor Fundamenteel Onderzoek der Materie
Fundación BBVA
Directorate-General for Research and Innovation
Ministerie van Onderwijs, Cultuur en Wetenschap
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02523
Reference41 articles.
1. Photocurrent generation with two-dimensional van der Waals semiconductors
2. Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor
3. Ultrafast graphene photodetector
4. Single-Layer MoS2 Phototransistors
5. Thin film MoS_2 nanocrystal based ultraviolet photodetector
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