High Responsivity Phototransistors Based on Few-Layer ReS2for Weak Signal Detection

Author:

Liu Erfu1,Long Mingsheng1,Zeng Junwen1,Luo Wei12,Wang Yaojia1,Pan Yiming1,Zhou Wei1,Wang Baigeng1,Hu Weida3,Ni Zhenhua4,You Yumeng5,Zhang Xueao2,Qin Shiqiao2,Shi Yi6,Watanabe Kenji7,Taniguchi Takashi7,Yuan Hongtao89,Hwang Harold Y.89,Cui Yi89,Miao Feng1,Xing Dingyu1

Affiliation:

1. National Laboratory of Solid State Microstructures; School of Physics; Collaborative Innovation Center of Advanced Microstructures; Nanjing University; Nanjing 210093 P.R. China

2. College of Science; National University of Defense Technology; Changsha 410073 P.R. China

3. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; Shanghai 200083 P.R. China

4. Department of Physics; Southeast University; Nanjing 211189 P.R. China

5. Department of Chemistry; Southeast University; Nanjing 211189 P.R. China

6. School of Electronic Science and Engineering; Nanjing University; Nanjing 210093 P.R. China

7. National Institute for Materials Science; 1-1 Namiki Tsukuba 305-0044 Japan

8. Geballe Laboratory for Advanced Materials; Stanford University; Stanford CA 94305 USA

9. Stanford Institute for Materials and Energy Sciences; SLAC National Accelerator Laboratory; Menlo Park CA 94025 USA

Funder

Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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