Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer-Reference-Cited by-同舟云学术

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Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

Published:2016-11-15 Issue:47 Volume:8 Page:32083-32088
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Yan¹²,Wang Xudong¹,Wang Peng¹,Huang Hai¹²,Wu Guangjian¹,Tian Bobo¹²,Hong Zhenchen³,Wang Yutao³,Sun Shuo¹,Shen Hong¹,Wang Jianlu¹,Hu Weida¹,Sun Jinglan¹,Meng Xiangjian¹,Chu Junhao¹

Affiliation:

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China

2. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China

3. Department of Physics, University of Science and Technology of China, Hefei 230000, China

Funder

Natural Science Foundation of Shanghai

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b10206

Reference30 articles.

1. Single-layer MoS2 transistors

2. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

3. Ultrafast graphene photodetector

4. Emerging Photoluminescence in Monolayer MoS2

5. Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

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