Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
Author:
Affiliation:
1. Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do South Korea
Funder
Samsung
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b03194
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