Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach-Reference-Cited by-同舟云学术

Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Published:2017-01-25 Issue:5 Volume:9 Page:4948-4955
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lin Tsung-Han¹,Margossian Tigran¹,De Marchi Michele²,Thammasack Maxime²,Zemlyanov Dmitry³,Kumar Sudhir¹,Jagielski Jakub¹,Zheng Li-Qing¹,Shih Chih-Jen¹^ORCID,Zenobi Renato¹,De Micheli Giovanni²,Baudouin David¹,Gaillardon Pierre-Emmanuel⁴,Copéret Christophe¹^ORCID

Affiliation:

1. Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog-Weg 1-5, CH-8093 Zürich, Switzerland

2. Department of Electrical Engineering, EPF Lausanne, CH-1015 Lausanne, Switzerland

3. Brick Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907-2057, United States

4. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah, 84112, United States

Funder

University of Utah

Eidgenössische Technische Hochschule Zürich

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

École Polytechnique Fédérale de Lausanne

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b13852

Reference31 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2. Scalability of strained-Si nMOSFETs down to 25 nm gate length

3. Roadmap for 22nm and beyond (Invited Paper)

4. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

5. Ge/Si nanowire heterostructures as high-performance field-effect transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conformal Deposition of Conductive Single-Crystalline Cobalt Silicide Layer on Si Wafer via a Molecular Approach;Chemistry of Materials;2018-02-21