Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn-Reference-Cited by-同舟云学术

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn

Published:2016-05-17 Issue:21 Volume:8 Page:13181-13186
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Gupta Somya¹²,Simoen Eddy¹³,Loo Roger¹,Madia Oreste⁴,Lin Dennis¹,Merckling Clement¹,Shimura Yosuke¹⁴,Conard Thierry¹,Lauwaert Johan⁵,Vrielinck Henk³,Heyns Marc¹²

Affiliation:

1. Imec, Kapeldreef 75, Leuven B-3001, Belgium

2. Department of Metallurgy and Materials Engineering (MTM), KU Leuven, Kasteelpark Arenberg 10, Leuven B-3001, Belgium

3. Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, Gent B-9000, Belgium

4. Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

5. Department of Electronics and Information Systems, Ghent University, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b01582

Reference30 articles.

1. High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

2. Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation

3. Lasing in direct-bandgap GeSn alloy grown on Si

4. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

5. Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy;Journal of Applied Physics;2024-01-28

2. Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer;Energy & Fuels;2023-12-28

3. Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

4. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting;Journal of Physics: Condensed Matter;2022-12-14

5. Heterointerface-engineered type Ⅱ SnO2/boron-doped diamond heterojunction photodiodes with diverse diode characteristics and binary photoresponse;Materials Chemistry and Physics;2022-12