Retardation Mechanism of Ultrathin Al2O3 Interlayer on Y2O3 Passivated Gallium Nitride Surface-Reference-Cited by-同舟云学术

Retardation Mechanism of Ultrathin Al2O3 Interlayer on Y2O3 Passivated Gallium Nitride Surface

Published:2014-04-17 Issue:10 Volume:6 Page:7797-7805
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Quah Hock Jin¹,Cheong Kuan Yew¹

Affiliation:

1. Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Seberang Perai Selatan, Pulau Pinang 14300, Malaysia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am501075s

Reference54 articles.

1. Surface Passivation of Gallium Nitride by Ultrathin RF-Magnetron Sputtered Al2O3 Gate

2. Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

3. Electrical Properties of Liquid Phase Deposited SiO[sub 2] on Photochemical Treated GaN

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