Surface Passivation of Gallium Nitride by Ultrathin RF-Magnetron Sputtered Al2O3 Gate-Reference-Cited by-同舟云学术

Surface Passivation of Gallium Nitride by Ultrathin RF-Magnetron Sputtered Al2O3 Gate

Published:2013-07-24 Issue:15 Volume:5 Page:6860-6863
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Quah Hock Jin¹,Cheong Kuan Yew¹

Affiliation:

1. Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am402333t

Reference20 articles.

1. GaN MIS Capacitors with Photo-CVD SiN[sub x]O[sub y] Insulating Layers

2. Study on Gallium Nitride-Based Metal–Oxide–Semiconductor Capacitors With RF Magnetron Sputtered $\hbox{Y}_{2}\hbox{O}_{3}$ Gate

3. Interface characterization of ALD deposited Al2O3 on GaN by CV method

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