Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers
Author:
Affiliation:
1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375, United States
2. ASEE Postdoctoral Fellow, 1818 N. St. NW #600, Washington, D.C. 20036, United States
Funder
American Society for Engineering Education
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg500830j
Reference24 articles.
1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. Dislocation conversion in 4H silicon carbide epitaxy
4. Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching
5. Silicon Carbide Substrates and Epitaxy Product Selection Guide. Available from:http://www.cree.com/LED-Chips-and-Materials/Materials.
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1. Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing<sup>®</sup>;Defect and Diffusion Forum;2024-08-22
2. Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers;physica status solidi (b);2024-02-10
3. Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals;CrystEngComm;2024
4. Characterization of dislocation etch pits by molten KOH etching in n- and p-type 4H–SiC epilayers doped by ion implantation;Materials Science in Semiconductor Processing;2023-10
5. Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers;Scripta Materialia;2023-10
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