The Role of Band Bending in Affecting the Surface Recombination Velocities for Si(111) in Contact with Aqueous Acidic Electrolytes
Author:
Affiliation:
1. Beckman Institute and Kavli Nanoscience Institute, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology, Pasadena, California 91125
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp075354s
Reference45 articles.
1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
2. Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF
3. Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces
4. In Search of Perfection: Understanding the Highly Defect-Selective Chemistry of Anisotropic Etching
5. Ideal hydrogen termination of the Si (111) surface
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