Ultrafast carrier dynamics and layer-dependent carrier recombination rate in InSe-Reference-Cited by-同舟云学术

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Ultrafast carrier dynamics and layer-dependent carrier recombination rate in InSe

Published:2023 Issue:7 Volume:15 Page:3169-3176
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wu Ting-Hsuan¹²^ORCID,Cheng Hao-Yu¹²³^ORCID,Lai Wei-Chiao²^ORCID,Sankar Raman²^ORCID,Chang Chia-Seng¹²^ORCID,Lin Kung-Hsuan²^ORCID

Affiliation:

1. Department of Physics, National Taiwan University, Taipei 106319, Taiwan

2. Institute of Physics, Academia Sinica, Taipei 115201, Taiwan

3. Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115201, Taiwan

Abstract

The ultrafast variation of optical bandgap, due to the presence of photocarriers, was investigated in exfoliated InSe. The thickness and surface condition play an important role in the carrier lifetime.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR05498A

Reference51 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

4. Two-dimensional materials and their prospects in transistor electronics

5. Electron scattering mechanisms inn-type indium selenide

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