Fluorinated Polyimide Gate Dielectrics for the Advancing the Electrical Stability of Organic Field-Effect Transistors
Author:
Affiliation:
1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, South Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am5035076
Reference34 articles.
1. Made to order
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