Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation-Reference-Cited by-同舟云学术

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Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation

Published:2012-01-10 Issue:2 Volume:12 Page:666-672
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zeng Y. J.¹,Pereira L. M. C.²,Menghini M.¹,Temst K.²,Vantomme A.²,Locquet J.-P.¹,Van Haesendonck C.¹

Affiliation:

1. Laboratory of Solid-State Physics and Magnetism, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, BE-3001 Leuven, Belgium

2. Instituut voor Kern-en Stralingsfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, BE-3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2034656

Reference42 articles.

1. Nanoelectronics from the bottom up

2. Semiconductor Nanowires for Energy Conversion

3. ZnO nanowire and nanobelt platform for nanotechnology

4. Synthesis and applications of one-dimensional semiconductors

5. Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications

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