Affiliation:
1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
2. Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen 518118 P. R. China
Abstract
AbstractFerroelectric (FE) materials, including BiFeO3, P(VDF‐TrFE), and CuInP2S6, are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low‐dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state‐of‐the‐art of FE‐based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.
Funder
National Natural Science Foundation of China
Shenzhen Science and Technology Innovation Program
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Cited by
15 articles.
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