Self-Aligned Fabrication of Graphene RF Transistors with T-Shaped Gate
Author:
Affiliation:
1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn300393c
Reference26 articles.
1. The rise of graphene
2. Graphene: Electronic and Photonic Properties and Devices
3. Graphene transistors
4. The electronic properties of graphene
5. Sub-100 nm Channel Length Graphene Transistors
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