Free-Standing Single-Crystal NiSi2 Nanowires with Excellent Electrical Transport and Field Emission Properties
Author:
Affiliation:
1. Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, Republic of China, and National Nano Device Laboratories, Hsinchu, Taiwan 30078, Republic of China
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp809029q
Reference31 articles.
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3. Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed
4. CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON
5. Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer
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