Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed-Reference-Cited by-同舟云学术

Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed

Published:2008-02-06 Issue:3 Volume:8 Page:925-930
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hu Yongjie¹,Xiang Jie¹,Liang Gengchiau¹,Yan Hao¹,Lieber Charles M.¹

Affiliation:

1. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, and School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl073407b

Reference66 articles.

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2. Moore's Law Forever?

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4. The Digital Evolution

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