Effect of Oxidation on the Doping of Silicon Nanocrystals with Group III and Group V Elements-Reference-Cited by-同舟云学术

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Effect of Oxidation on the Doping of Silicon Nanocrystals with Group III and Group V Elements

Published:2012-03-28 Issue:14 Volume:116 Page:8243-8250
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Carvalho Alexandra¹,Rayson Mark J.²,Briddon Patrick R.³

Affiliation:

1. Department of Physics, I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal

2. Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå S-97187, Sweden

3. Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp300712v

Reference32 articles.

1. Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

2. Electronic properties of doped silicon nanocrystal films

3. Doping efficiency, dopant location, and oxidation of Si nanocrystals

4. Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters

5. Size Limits on Doping Phosphorus into Silicon Nanocrystals

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1. The preferred doping site of B atom in the Si nanocrystals saturated by halogen atoms;Vacuum;2024-08

2. The Preferred Doping Site of B Atom in the Si Nanocrystals Saturated by Halogen Atoms;2024

3. First principles study on phosphorus or boron doping in si nanocrystals with various sizes embedded in SiO₂ matrix;Physica Scripta;2023-05-04

4. Influence of quantum dot shape on the formation energy of boron dopants in silicon;Journal of Applied Physics;2020-08-07

5. Site discrimination and size effect of B-doping in Si nanocrystals by second-neighbor atom consideration;Journal of Applied Physics;2019-09-28

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