Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation-Reference-Cited by-同舟云学术

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Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

Published:2009-10-23 Issue:16 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Stegner A. R.,Pereira R. N.,Lechner R.,Klein K.,Wiggers H.,Stutzmann M.,Brandt M. S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.165326/fulltext

Reference49 articles.

1. Air-Stable All-Inorganic Nanocrystal Solar Cells Processed from Solution

2. Electronic properties of doped silicon nanocrystal films

3. Thermoelectric effect in laser annealed printed nanocrystalline silicon layers

4. Hybrid Solar Cells from P3HT and Silicon Nanocrystals

5. Photoluminescence mechanism in surface-oxidized silicon nanocrystals

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4. Mott and Efros–Shklovskii Variable-Range Hopping Conduction in Films Formed by Silicon Nanoparticles Doped with Phosphorus and Boron;Semiconductors;2022-02

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