Impurity Gettering by Silicon Nitride Films: Kinetics, Mechanisms, and Simulation-Reference-Cited by-同舟云学术

Impurity Gettering by Silicon Nitride Films: Kinetics, Mechanisms, and Simulation

Published:2021-10-01 Issue:10 Volume:4 Page:10849-10856
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Le Tien T.¹^ORCID,Hameiri Ziv²,Truong Thien N.¹^ORCID,Yang Zhongshu¹,Macdonald Daniel¹,Liu AnYao¹^ORCID

Affiliation:

1. School of Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

2. School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia

Funder

Australian Centre for Advanced Photovoltaics

Australian Renewable Energy Agency

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c01826

Reference43 articles.

1. Metal Impurities in Silicon-Device Fabrication

2. Mechanisms of transition-metal gettering in silicon

3. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

4. Gettering Effects of Silicon Nitride Films From Various Plasma-Enhanced Chemical Vapor Deposition Conditions

5. Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion

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