Surface Defects-Induced p-type Conduction of Silicon Nanowires-Reference-Cited by-同舟云学术

Surface Defects-Induced p-type Conduction of Silicon Nanowires

Published:2011-08-31 Issue:38 Volume:115 Page:18453-18458
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Luo Lin-Bao¹²,Yang Xiao-Bao¹³,Liang Feng-Xia¹,Xu Hu¹,Zhao Yu¹,Xie Xing¹,Zhang Wen-Feng¹,Lee Shuit-Tong¹

Affiliation:

1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People’s Republic of China

2. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, People’s Republic of China

3. Department of Physics, South China University of Technology, Guangzhou, 510641, Guangdong Province, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp205171j

Reference49 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Silicon-Based Low-Dimensional Nanomaterials and Nanodevices

3. Semiconductor Wires and Ribbons for High- Performance Flexible Electronics

4. Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires

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