Spatial and thickness dependence of coupling interaction of surface states and influence on transport and optical properties of few-layer Bi2Se3-Reference-Cited by-同舟云学术

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Spatial and thickness dependence of coupling interaction of surface states and influence on transport and optical properties of few-layer Bi2Se3

Published:2018-01-16 Issue:6 Volume:30 Page:065503
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Li Zhongjun^ORCID,Chen Shi,Sun Jiuyu,Li Xingxing,Qiu Huaili,Yang Jinlong

Funder

Fundamental Research Funds for the Central Universities

Anhui Natural Science Foundation of China

The USTCSCC, SCCAS, Tianjin, and Shanghai Supercomputer Centers

National Key Research & Development Program of China

National Natural Science Foundation of China (NSFC)

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://iopscience.iop.org/article/10.1088/1361-648X/aaa476/pdf

Reference42 articles.

1. Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film

2. Thickness and growth-condition dependence of in-situ mobility and carrier density of epitaxial thin-film Bi2Se3

3. Growth and characterization of molecular beam epitaxy-grown Bi2Te3−xSex topological insulator alloys

4. Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si

5. Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi2Se3

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1. Complex optical conductivity of Bi2Se3 thin film: Approaching two-dimensional limit;Applied Physics Letters;2021-05-10

2. Defect-induced diverse electronic, magnetic and optical properties in monolayer CaP3;Materials Today Communications;2020-06

3. Layer-dependent dielectric permittivity of topological insulator Bi2Se3 thin films;Applied Surface Science;2020-04

4. Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy;Physical Chemistry Chemical Physics;2019

5. Bulk transport properties of bismuth selenide thin films grown by magnetron sputtering approaching the two-dimensional limit;Journal of Applied Physics;2018-09-14

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