Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si-Reference-Cited by-同舟云学术

Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si

Author:

Liu Y. H.¹,Chong C. W.¹,Jheng J. L.²,Huang S. Y.¹,Huang J. C. A.¹³⁴,Li Z.⁵,Qiu H.⁵,Huang S. M.²,Marchenkov V. V.⁶

Affiliation:

1. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan

2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

3. Advanced Optoelectronic Technology Center (AOTC), National Cheng Kung University, Tainan 70101, Taiwan

4. Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan

5. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, China

6. M.N. Miheev Institute of Metal Physics, Ekaterinburg 620137, Russia

Funder

NSYSU-KMU

Taiwan National Science Council

Russian Foundation for Basic Research (RFBR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference34 articles.

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