Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in-situ spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in-situ spectroscopic ellipsometry

Published:2022-08 Issue: Volume:591 Page:126714
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bai Aofeng,Hilse Maria^ORCID,Patil Prasanna D.^ORCID,Engel-Herbet Roman,Peiris Frank

Funder

NSF

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference49 articles.

1. The birth of topological insulators;Moore;Nature,2010

2. Colloquium : Topological insulators;Hasan;Rev. Mod. Phys.,2010

3. Topological materials;Yan;Rep. Prog. Phys.,2012

4. Three-Dimensional Topological Insulators;Hasan;Annu. Rev. Condens. Matter Phys.,2011

5. Topological field theory of time-reversal invariant insulators;Qi;Phys. Rev. B - Condensed Matter Mater. Phys.,2008

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling the coverage of MoS2 and WS2 thin films using in-situ spectroscopic ellipsometry;Journal of Crystal Growth;2024-08

2. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

3. Broadband Optical Properties of Bi2Se3;Nanomaterials;2023-04-25

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