Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy-Reference-Cited by-同舟云学术

Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy

Author:

Li Zhongjun¹²³⁴⁵^ORCID,Qian Mingzhi¹²³⁴,Song Lingling¹²³⁴,Ma Liang⁵⁶⁷⁸⁹^ORCID,Qiu Huaili¹²³⁴,Zeng Xiao Cheng⁵⁶⁷⁸¹⁰^ORCID

Affiliation:

1. School of Electronic Science and Applied Physics

2. Hefei University of Technology

3. Hefei

4. China

5. Department of Chemistry

6. University of Nebraska-Lincoln

7. Lincoln

8. USA

9. School of Physics

10. Department of Chemical & Biomolecular Engineering and Department of Mechanical and Materials Engineering

Abstract

Ohmic contact in m-InP₃ and G or Ni interface is achieved by introducing intrinsic defects and inserting a buffer layer.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference52 articles.

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