MoS <sub>2</sub> Transistor with Weak Fermi Level Pinning via MXene Contacts-Reference-Cited by-同舟云学术

MoS ₂ Transistor with Weak Fermi Level Pinning via MXene Contacts

Published:2022-08-15 Issue:43 Volume:32 Page:2204288
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Chen Ruo‐Si¹,Ding Guanglong²,Feng Zihao²,Zhang Shi‐Rui³,Mo Wen‐Ai¹,Han Su‐Ting¹,Zhou Ye²^ORCID

Affiliation:

1. College of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. China

2. Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China

3. Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra, Australian Capital Territory 2601 Australia

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202204288

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4. Electric Field Effect in Atomically Thin Carbon Films

5. High Performance Multilayer MoS2 Transistors with Scandium Contacts

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