Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications-Reference-Cited by-同舟云学术

Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

Published:2010-11-19 Issue:12 Volume:10 Page:5060-5064
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xia J. L.¹²,Chen F.¹,Wiktor P.¹,Ferry D. K.²,Tao N. J.¹²

Affiliation:

1. Center for Bioelectronics and Biosensors, Biodesign Institute

2. School of Electrical, Computer, and Energy Engineering

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl103306a

Reference33 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene transistors

3. Detection of individual gas molecules adsorbed on graphene

4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

5. Charged-impurity scattering in graphene

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