Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films-Reference-Cited by-同舟云学术

Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films

Published:2015-02-17 Issue:8 Volume:119 Page:4414-4421
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

An Yukai¹,Ren Yuan¹,Yang Dongyan¹,Wu Zhonghua²,Liu Jiwen¹

Affiliation:

1. Tianjin Key Laboratory for Photoelectric Materials and Devices; School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Funder

National Natural Science Foundation of China

Beijing Synchrotron Radiation Laboratory

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp513016q

Reference38 articles.

1. Co Cluster Formation Induced by Cu Codoping in Co:ZnO Semiconductor Thin Films

2. Ferromagnetism Induced by Oxygen Vacancies in Zinc Peroxide Nanoparticles

3. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

4. Structural, optical and magnetic properties of sol–gel derived ZnO:Co diluted magnetic semiconductor nanocrystals: an EXAFS study

5. Optical and Magnetic Properties of Zn1–xMnxO Nanorods Grown by Chemical Vapor Deposition

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