MoS<sub>2</sub> as an Effective Cu Diffusion Barrier with a Back-End Compatible Process-Reference-Cited by-同舟云学术

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MoS₂ as an Effective Cu Diffusion Barrier with a Back-End Compatible Process

Published:2023-09-28 Issue:40 Volume:15 Page:47845-47854
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kuo Chi-Yuan¹,Chang Ya-Ting¹,Huang Yu-Ting¹,Ni I-Chih¹,Chen Mei-Hsin²^ORCID,Wu Chih-I¹^ORCID

Affiliation:

1. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan

2. Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c12267

Reference36 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Bonilla, G.; Lanzillo, N.; Hu, C.K.; Penny, C.; Kumar, A. In Interconnect Scaling Challenges, and Opportunities to Enable System-Level Performance Beyond 30 Nm Pitch, IEEE International Electron Devices Meeting (IEDM); IEEE, 2020.

3. Transfer-free multi-layer graphene as a diffusion barrier

4. Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology

5. Large-Area, Single-Layer Molybdenum Disulfide Synthesized at BEOL Compatible Temperature as Cu Diffusion Barrier

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process;Journal of Vacuum Science & Technology A;2024-08-30

2. Vapor-Phase Self-Assembled Monolayer With Functional Groups as a Copper Diffusion Barrier Layer for InSnZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2024-04

3. Graphene-All-Around Cobalt Interconnect with a Back-End-of-Line Compatible Process;Nano Letters;2024-01-31

4. Excitonic Rydberg States in a Trilayer to Monolayer H₂-Aided CVD-Grown Large-Area MoS₂ Film with Excellent UV to Visible Broad Band Photodetection Applications;ACS Applied Materials & Interfaces;2024-01-04

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