Vapor-Phase Self-Assembled Monolayer With Functional Groups as a Copper Diffusion Barrier Layer for InSnZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

Vapor-Phase Self-Assembled Monolayer With Functional Groups as a Copper Diffusion Barrier Layer for InSnZnO Thin-Film Transistors

Published:2024-04 Issue:4 Volume:71 Page:2446-2451
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lu Haodong¹^ORCID,Zhong Wei¹^ORCID,Lei Dengyun¹^ORCID,Chen Yayi¹^ORCID,Ni Yao¹^ORCID,Liu Zhen¹,Lai Canxiong²,Chen Rongsheng³^ORCID,Kwok Hoi Sing⁴,Liu Yuan¹^ORCID

Affiliation:

1. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

3. School of Microelectronics, South China University of Technology, Guangzhou, China

4. Department of Electronic and Computer Engineering, State Key Laboratory on Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Sai Kung, Hong Kong

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10445429.pdf?arnumber=10445429

Reference32 articles.

1. The development of flexible integrated circuits based on thin-film transistors

2. A Novel Envelope Detector Based on Unipolar Metal-Oxide TFTs

3. The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics

4. Advanced Interconnects: Materials, Processing, and Reliability

5. Cu Diffusion-Driven Dynamic Modulation of the Electrical Properties of Amorphous Oxide Semiconductors