Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://www.nature.com/articles/s41699-017-0044-0.pdf
Reference37 articles.
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3. Watanabe, T. et al. Self-formed barrier technology using CuMn alloy seed for copper dual-damascene interconnect with porous-SiOC/porous-PAr hybrid dielectric. Proc. Int. Interconnect. Technol. Conf. 7–9 (2007).
4. Kapur, P. et al. Technology and reliability constrained future copper interconnects—part I: resistance modeling. IEEE Trans. Electron Dev. 49, 590–596 (2002).
5. Li, L. et al. Vertical and lateral copper transport through graphene layers. ACS Nano 9, 8361–8367 (2015).
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