Nano t-Se Peninsulas Embedded in Natively Oxidized 2D TiSe2 Enable Uniform and Fast Memristive Switching
Author:
Affiliation:
1. Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
2. Hubei Yangtze Memory Laboratories, Wuhan 430205, China
Funder
National Key Research and Development Program of China
Huazhong University of Science and Technology
National Natural Science Foundation of China
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00818
Reference55 articles.
1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2. Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor
3. Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications
4. A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications
5. Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application
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